ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,254, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing apparatus" was invented by Akira Nakagawa (Miyagi, Japan), Kenji Komatsu (Miyagi, Japan), Kazuma Kamimura (Miyagi, Japan) and Tsukasa Hirayama (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 KW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated fro...