US Patent Issued to Tokyo Electron, TOKYO INSTITUTE OF TECHNOLOGY on May 19 for "Pattern forming method and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,630,724, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo) and TOKYO INSTITUTE OF TECHNOLOGY (Tokyo).

"Pattern forming method and plasma processing method" was invented by Shin Oowada (Tokyo), Tatsuya Yamaguchi (Yamanashi, Japan), Ryuichi Asako (Yamanashi, Japan), Takanori Fukushima (Tokyo), Yoshiaki Shoji (Tokyo), Takashi Kajitani (Tokyo) and Hibiki Ogiwara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, an...