ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,084, issued on Nov. 18, was assigned to Tokyo Electron Ltd. (Tokyo) and Kyushu University National University Corp. (Fukuoka, Japan).

"Plasma processing apparatus, high-frequency power supply circuit, and impedance matching method" was invented by Masaharu Shiratani (Fukuoka, Japan), Kunihiro Kamataki (Fukuoka, Japan), Kazunori Koga (Fukuoka, Japan), Takahiro Shindo (Nirasaki, Japan) and Tatsuo Matsudo (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a hi...