US Patent Issued to Tokyo Electron, International Business Machines on Nov. 3 for "Halogen gas mixtures for through-substrate etching" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,671, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo) and International Business Machines Corp. (Armonk, N.Y.).

"Halogen gas mixtures for through-substrate etching" was invented by Devi Koty (Hopewell Junction, N.Y.), Qingyun Yang (Hopewell Junction, N.Y.) and Nathan P. Marchack (New York).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate can be loaded into a plasma chamber, the semiconductor substrate having a through opening within a mask layer disposed over the semiconductor substrate. Using a plasma process, a through substrate via can be formed within the semiconductor substrate. The through substrate via can h...