US Patent Issued to Tokuyama on Dec. 23 for "Polycrystalline silicon rod and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,369, issued on Dec. 23, was assigned to Tokuyama Corp. (Yamaguchi, Japan).

"Polycrystalline silicon rod and method for manufacturing same" was invented by Takamitsu Kamikawa (Yamaguchi, Japan), Miki Emoto (Yamaguchi, Japan) and Takuya Asano (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a polycrystalline silicon rod includes: while energizing a core wire formed of silicon, supplying a polycrystalline silicon deposition raw material gas into a reactor so as to perform gas phase growth of polycrystalline silicon on a surface of the core wire, in which during a period from a completion of cleaning of the surface...