US Patent Issued to Tohoku University on March 24 for "Porous amorphous silicon, method for producing porous amorphous silicon, and secondary battery" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,583,753, issued on March 24, was assigned to Tohoku University (Sendai, Japan).

"Porous amorphous silicon, method for producing porous amorphous silicon, and secondary battery" was invented by Junpei Okada (Sendai, Japan), Koji Nakayama (Sendai, Japan) and Takeshi Wada (Sendai, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A porous amorphous silicon which enables improvement in battery performances such as charge/discharge efficiency and battery capacity when used as the anode material; a method for producing a porous amorphous silicon, capable of producing a porous amorphous silicon composed entirely of amorphous silicon at relatively low cost ...