US Patent Issued to TOHOKU UNIVERSITY on April 7 for "Magnetoresistive element and magnetic memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,920, issued on April 7, was assigned to TOHOKU UNIVERSITY (Sendai, Japan).

"Magnetoresistive element and magnetic memory device" was invented by Tetsuo Endoh (Sendai, Japan) and Hiroshi Naganuma (Sendai, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electr...