US Patent Issued to TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY on Oct. 27 for "Composite silicon carbide substrate and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,774,537, issued on Oct. 27, was assigned to TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY Co. LTD (Tianjin, China).

"Composite silicon carbide substrate and preparation method therefor" was invented by Fengwen Mu (Tianjin, China) and Chao Guo (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a composite silicon carbide substrate and a preparation method therefor, and the substrate comprises a monocrystalline silicon carbide layer and a silicon carbide support layer; a first doped silicon carbide layer is arranged between the monocrystalline silicon carbide layer and the silicon carbide support layer; a bonding interface laye...