US Patent Issued to TIANJIN SANAN OPTOELECTRONICS on May 19 for "Light-emitting diode, light-emitting diode package, and light-emitting device" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,306, issued on May 19, was assigned to TIANJIN SANAN OPTOELECTRONICS Co. LTD. (Tianjin, China).

"Light-emitting diode, light-emitting diode package, and light-emitting device" was invented by Taotao Yin (Tianjin, China), Jin Wang (Tianjin, China), Huanshao Kuo (Tianjin, China), Yu-Ren Peng (Tianjin, China) and Duxiang Wang (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electro...