ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,241, issued on March 24, was assigned to ThinSiC Inc. (Santa Clara, Calif.).
"Batch mode silicon carbide epitaxial reactor" was invented by Tirunelveli Subramaniam Ravi (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A batch mode SiC (Silicon Carbide) epitaxial reactor comprising an inlet gas manifold, an inlet heat exchanger coupled to the inlet gas manifold, a plurality of removable vertical susceptors configured to couple to the inlet heat exchanger, a plurality of exhaust heat exchangers coupled to the plurality of removable vertical susceptors, and a scrubber coupled to the plurality of exhaust heat exchangers. Each removable ...