US Patent Issued to The University of Tokyo on May 19 for "Magnetic memory element" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,329, issued on May 19, was assigned to The University of Tokyo (Tokyo).

"Magnetic memory element" was invented by Satoru Nakatsuji (Tokyo) and Tomoya Higo (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory element includes an antiferromagnetic layer made of a canted antiferromagnet having a magnetic order with a canted magnetic moment, and a contact layer in contact with the antiferromagnetic layer and made of a different material from the canted antiferromagnet. A roughness of an interface between the antiferromagnetic layer and the contact layer is 1.0 nm or less. A spin current flowing through the contact layer is configured t...