US Patent Issued to THE UNIVERSITY OF BATH on June 30 for "Atomic layer deposition method of metal (II), (0), or (IV) containing film layer" (British Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,668,875, issued on June 30, was assigned to THE UNIVERSITY OF BATH (Bath, Great Britain).

"Atomic layer deposition method of metal (II), (0), or (IV) containing film layer" was invented by James D. Parish (Bath, Great Britain) and Andrew L. Johnson (Bath, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "An atomic layer deposition (ALD) method may include forming a chemisorbed, surface-bound metal-ligand species using a metal M (II) primary precursor of formula (I):In formula (I), M is Sn or Ge or Pb; L is a ligand displaying ALD reactivity for a secondary precursor; and R1, R2, and R3 are each independently selected from: H or a linear or br...