US Patent Issued to The Research Foundation for the State University of New York on Jan. 27 for "Resistive random access memory device" (New York Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,717, issued on Jan. 27, was assigned to The Research Foundation for the State University of New York (Albany, N.Y.).

"Resistive random access memory device" was invented by Nathaniel Cady (Delmar, N.Y.), Karsten Beckmann (Albany, N.Y.) and Joseph Van Nostrand (Rome, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (ReRAM) device that minimizes filament formation at the edges of the dielectric. The device has a bottom electrode and a top electrode with a switching layer disposed therebetween. The bottom electrode also has first and second sidewalls spaced apart by a first distance where the sidewalls contact the bo...