US Patent Issued to The Regents of the University of Michigan on Feb. 3 for "Growth-anneal cycling of a semiconductor layer" (Michigan Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,515, issued on Feb. 3, was assigned to The Regents of the University of Michigan (Ann Arbor, Mich.).

"Growth-anneal cycling of a semiconductor layer" was invented by Zetian Mi (Ann Arbor, Mich.), David Laleyan (Ann Arbor, Mich.) and Ping Wang (Ann Arbor, Mich.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The...