US Patent Issued to The Regents of the University of California on July 28 for "Activation of p-type layers of tunnel junctions" (California Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,586, issued on July 28, was assigned to The Regents of the University of California (Oakland, Calif.).

"Activation of p-type layers of tunnel junctions" was invented by Panpan Li (Goleta, Calif.), Hongjian Li (Goleta, Calif.), Michael Iza (Goleta, Calif.), Shuji Nakamura (Santa Barbara, Calif.) and Steven P. DenBaars (Goleta, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method to fabricate micro-size III-nitride light emitting diodes (MuLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the MuLEDs have a ...