US Patent Issued to The Hong Kong University of Science and Technology on Aug. 4 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,736, issued on Aug. 4, was assigned to The Hong Kong University of Science and Technology (Hong Kong).

"Semiconductor device and method for manufacturing the same" was invented by Jing Chen (Hong Kong), Zheyang Zheng (Hong Kong) and Li Zhang (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a buffer layer, a barrier layer, a nitride-based semiconductor layer, an isolation layer, and a gate electrode. The barrier layer is disposed on the buffer layer. The nitride-based semiconductor layer is disposed on the barrier layer and has a channel region and a doped region abutting against each other. The isolation layer...