ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,467, issued on May 12, was assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (Urbana, Ill.).
"Heterogeneous chip integration of III-nitride-based materials for optoelectronic device arrays in the visible and ultraviolet" was invented by John Michael Dallesasse (Geneva, Ill.) and John A. Carlson (Westlake Village, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate f...