US Patent Issued to The Board of Trustees of the University of Illinois on April 21 for "Large area synthesis of cubic phase gallium nitride on silicon" (Illinois Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,762, issued on April 21, was assigned to The Board of Trustees of the University of Illinois (Urbana, Ill.).

"Large area synthesis of cubic phase gallium nitride on silicon" was invented by Can Bayram (Champaign, Ill.) and Muhammad Ali Johar (Urbana, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer includes a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-b...