US Patent Issued to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA on Aug. 4 for "Rapid layer-specific photonic annealing of perovskite thin films" (Alabama Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,908, issued on Aug. 4, was assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA (Tuscaloosa, Ala.).

"Rapid layer-specific photonic annealing of perovskite thin films" was invented by Dawen Li (Tuscaloosa, Ala.) and Zhongliang Ouyang (Tuscaloosa, Ala.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source is a UV light emitting diode or array of UV-LEDs for rapid and large-area exposure without scanning over the perovskite film, wherein the light source emits radiation consisting essentially of wavel...