US Patent Issued to The 13th Research Institute of China Electronics Technology Group on June 9 for "Large-scale compound semiconductor single crystal growth system and method" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,649,979, issued on June 9, was assigned to The 13th Research Institute of China Electronics Technology Group Corp. (Shijiazhuang, China).

"Large-scale compound semiconductor single crystal growth system and method" was invented by Shujie Wang (Shijiazhuang, China), Niefeng Sun (Shijiazhuang, China), Yanlei Shi (Shijiazhuang, China), Huimin Shao (Shijiazhuang, China), Senfeng Xu (Shijiazhuang, China), Lijie Fu (Shijiazhuang, China), Yang Wang (Shijiazhuang, China), Xiaolan Li (Shijiazhuang, China), Xin Ou (Shijiazhuang, China), Ruiliang Song (Shijiazhuang, China), Huisheng Liu (Shijiazhuang, China) and Tongnian Sun (Shijiazhuang, China).

According to the abstract* released by the U.S. ...