US Patent Issued to TEXAS INSTRUMENTS on Oct. 27 for "Semiconductor device with gate electrode having opposite type doping at drain end and source end including a self-aligned dwell implant" (Texas Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,702, issued on Oct. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Semiconductor device with gate electrode having opposite type doping at drain end and source end including a self-aligned dwell implant" was invented by Henry Litzmann Edwards (Garland, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed examples include microelectronic devices, e.g. integrated circuits, which include a source region and a drain region extending into a semiconductor substrate, the semiconductor substrate having a second conductivity type, the source region and drain region having an opposite first conductivity type. A channel region having the secon...