US Patent Issued to TEXAS INSTRUMENTS on Oct. 27 for "MIM flux capacitor with thin and thick metal levels" (Indian Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,921, issued on Oct. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"MIM flux capacitor with thin and thick metal levels" was invented by Kumar Anurag Shrivastava (Bangalore, India) and Viresh Chinchansure (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes first second metal levels over a semiconductor substrate. A first capacitor electrode in the first metal level has a plurality of first lines. A second capacitor electrode in the first metal level includes a plurality of second lines alternating with the plurality of first metal lines. A third capacitor electrode in the second metal level includes ...