US Patent Issued to TEXAS INSTRUMENTS on May 5 for "Monitor structure for photoresist thickness in trench" (Chinese, American Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,151, issued on May 5, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Monitor structure for photoresist thickness in trench" was invented by Yunlong Liu (Beijing), Hong Yang (Wylie, Texas), Peng Li (Chongqing, China), Yung Shan Chang (Plano, Texas), Sheng Pin Yang (Chengdu, China) and Ya Ping Chen (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a microelectronic device includes forming positive tone photoresist on the microelectronic device, filling a trench, extending over a top surface adjacent to the trench, and covering a thickness monitor on a substrate containing the microelectronic device. The photoresist in...