ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,674, issued on March 3, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Semiconductor laser anneal fabrication and system" was invented by Xiangzheng Bo (Plano, Texas) and Huang-Chun Wen (Dallas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an integrated circuit is described. The method first positions a semiconductor wafer in a processing chamber, and second, laser anneals at least a portion of the semiconductor wafer. The laser annealing includes tracing a first laser beam, in a first path having a first direction, across the at least a portion of the semiconductor wafer, tracing a second laser beam, in a second path having ...