ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,718, issued on March 17, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Raised source/drain transistor" was invented by Manoj Mehrotra (Plano, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors with raised source/drain structures and methods of making the transistors are described. A method for making such transistors includes forming a first gate and a second gate on a substrate, forming a p-doped region adjacent the first gate, and forming an n-doped region adjacent the second gate. The method further includes forming a silicon germanium (SiGe) region in a portion of the p-doped region. Subsequently, the method simultaneously for...