US Patent Issued to TEXAS INSTRUMENTS on June 30 for "LDMOS device and method of fabrication of same" (California Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,332, issued on June 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"LDMOS device and method of fabrication of same" was invented by Jingjing Chen (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LDMOS device includes a semiconductor substrate with an epitaxial layer that comprises a body region and a drain drift region. A drain region is formed in the drain drift region and a source region is formed in the body region. A gate shield may be formed over a gate shield dielectric layer disposed over a gate electrode, the gate shield having a variable length and tied to the source that is provided with a body connection via a ...