US Patent Issued to TEXAS INSTRUMENTS on June 23 for "Wide bandgap material in drift well of semiconductor device" (Texas Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,674, issued on June 23, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Wide bandgap material in drift well of semiconductor device" was invented by Ebenezer Eshun (Frisco, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to semiconductor devices including a material having a wide bandgap energy, or simply bandgap, located in a drift well of the semiconductor device. In an example, a semiconductor device includes a laterally-diffused metal-oxide-semiconductor (LDMOS) transistor. The LDMOS transistor includes a drain region, a source region, and a drift well. The drain region is disposed in a semiconduct...