US Patent Issued to TEXAS INSTRUMENTS on June 23 for "Wet anisotropic etching of silicon" (Texas Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,627, issued on June 23, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Wet anisotropic etching of silicon" was invented by Simon Joshua Jacobs (Lucas, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (-OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching soluti...