US Patent Issued to TEXAS INSTRUMENTS on July 7 for "Semiconductor devices with selectively doped gate electrode structure" (Texas Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,439, issued on July 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Semiconductor devices with selectively doped gate electrode structure" was invented by Dhanoop Varghese (Plano, Texas), Henry Litzmann Edwards (Garland, Texas) and Pinghai Hao (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices including selectively doped gate electrodes are described. The semiconductor device comprises a substrate including a body region and a drift region, a gate dielectric layer on the substrate, the gate dielectric layer extending over the body region and the drift region, and a field relief dielectric layer on the drift region...