ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,841, issued on Feb. 24, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Electrostatic discharge (ESD) protection circuit" was invented by Kuo Yao Lin (Garland, Texas) and Akram Salman (Plano, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to an electrostatic discharge (ESD) protection circuit in an integrated circuit and methods of forming such. In an example, an integrated circuit includes a transistor, a doped buried layer, and a capacitor. The transistor includes source and drain regions and a gate structure. The source and drain regions have a first conductivity type and are disposed in a semicond...