US Patent Issued to TEXAS INSTRUMENTS on Dec. 23 for "Biasing isolation region in semiconductor substrate" (North Carolina, Texas Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,468, issued on Dec. 23, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Biasing isolation region in semiconductor substrate" was invented by Orlando Lazaro (Cary, N.C.), John Russell Broze (Dallas) and Timothy Bryan Merkin (Princeton, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Biasing an isolation region in a semiconductor substrate. An integrated circuit includes a semiconductor substrate, a first rectifying device, and a second rectifying device. The semiconductor substrate has a first region, a second region, and a third region each being an opposite conductivity type from the semiconductor substrate. The first region and the second r...