US Patent Issued to TEXAS INSTRUMENTS on Aug. 4 for "Lateral fin field-effect transistors" (Texas Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,738, issued on Aug. 4, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Lateral fin field-effect transistors" was invented by Manoj Mehrotra (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a described example, an integrated circuit includes a substrate of a semiconductor material, a source region, a gate region, a drain region and a fin structure formed on the substrate. The fin structure includes the gate region, the source region and a drift region between the gate region and the drain region. A doped control layer is formed along at least one sidewall of the fin structure over the drift region."

The patent was filed on Dec. 21, 2...