US Patent Issued to TetraMem on July 28 for "Resistive random-access memory (RRAM) devices with interface layers" (California, Massachusetts Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,691, issued on July 28, was assigned to TetraMem Inc. (San Jose, Calif.).

"Resistive random-access memory (RRAM) devices with interface layers" was invented by Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, an interface layer fabricated on the first electrode, a switching oxide layer comprising at least one transition metal oxide; and a second electrode fabricated on the switching oxide layer. The interface layer may include a discontinuous layer of a dielectric ma...