US Patent Issued to TetraMem on Feb. 10 for "Crossbar circuits including RRAM devices with minimized write disturbances" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,631, issued on Feb. 10, was assigned to TetraMem Inc. (San Jose, Calif.).

"Crossbar circuits including RRAM devices with minimized write disturbances" was invented by Hengfang Zhu (Fremont, Calif.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides for crossbar circuits with minimized write disturbance. A crossbar circuit may include a plurality of bit lines intersecting with a plurality of word lines, a plurality of select lines, a plurality of cross-point devices, and a ramp-rate adjustable DAC that comprises a control circuit and an operational amplifier. An input of the operational amplif...