ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,993, issued on Dec. 2, was assigned to TES Co. LTD (Yongin-si, South Korea).
"Substrate processing method" was invented by Bong-Soo Kwon (Yongin-si, South Korea), Do-Hyun Kim (Yongin-si, South Korea), Yu-Ri Park (Yongin-si, South Korea) and Se-Chan Kim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method, involving etching a silicon nitride layer selectively in a substrate where a silicon oxide layer and the silicon nitride layer are stacked, includes: wet-etching the silicon nitride layer with a phosphoric acid-based etching solution; and dry-etching a regrowth oxide, which is formed on a surface of th...