ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,332, issued on Sept. 8, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).

"Quantum dot light-emitting diodes, manufacturing method thereof, and quantum dot films" was invented by Likuan Zhou (Huizhou, China) and Yixing Yang (Huizhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a quantum dot light-emitting diode, a manufacturing method thereof, and a quantum dot film. The quantum dot light-emitting diode includes a first electrode, a second electrode, and a quantum dot light-emitting layer. The quantum dot light-emitting layer is disposed between the first electrode and the second electrode. The qua...