ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,322, issued on July 21, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).
"Quantum dot light-emitting diode and fabrication method thereof" was invented by Zhiwen Nie (Huizhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance."
The patent was filed on Oct. 7, 2022, under Application No. 17/962,433.
*Fo...