US Patent Issued to TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY on Nov. 3 for "Thin-film transistor having a source/drain region beneath a gate and a source electrode on a different layer from a drain electrode, display panel comprising the same, and manufacturing method of the display panel" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,357, issued on Nov. 3, was assigned to TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY Co. LTD. (Shenzhen, China).

"Thin-film transistor having a source/drain region beneath a gate and a source electrode on a different layer from a drain electrode, display panel comprising the same, and manufacturing method of the display panel" was invented by Macai Lu (Shenzhen, China), Minggang Liu (Shenzhen, China) and Nian Liu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film transistor (TFT), a display panel, and a manufacturing method of the display panel are provided. The TFT includes: a gate, a gate insulating layer, an active layer, a fi...