US Patent Issued to TAIWAN SEMICONDUCTOR MEMORY on March 24 for "Resistive memory and operating method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,638, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MEMORY INC. (Hsinchu City, Taiwan).

"Resistive memory and operating method thereof" was invented by Steve S. Chung (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a first select transistor, a first resistor, a second resistor and a first transistor. The first select transistor is configured to provide a first voltage signal to a first node. The first resistor is configured to store a first data bit according to the first voltage signal. A first terminal of the first resistor is coupled to the first node. The second resistor is configured to store a ...