US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACUTRING on Nov. 3 for "Shape of core gate electrode of semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,401, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACUTRING COMPANY LTD. (Hsinchu, Taiwan).

"Shape of core gate electrode of semiconductor device structure and methods of forming the same" was invented by Jhen-Wei Chen (Tainan, Taiwan), Ling-Sung Wang (Tainan, Taiwan), Yung-Yu Chen (Tainan, Taiwan) and Yi-Ming Lin (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first gate electrode, which includes a first section having a slanted sidewall and an imaginary sidewall, a second section extending...