US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Thin film transistor featuring variable thickness glue layer with tapered end" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,326, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transistor featuring variable thickness glue layer with tapered end" was invented by Ya-Ling Lee (Hsinchu, Taiwan), Wei-Gang Chiu (New Taipei, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate electrode, a gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed over the substrate. The gate dielectric layer is disposed over the gate electrode. The channel lay...