US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Semiconductor structure including nanosheet channel structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,340, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure including nanosheet channel structure and method for forming the same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsin-Chu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a method for forming the same. The semiconductor structure includes a first nanosheet channel structure and a first high-k dielectric layer surrounding the first nanosheet channel structure. In addition, the semiconductor structure in...