US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Method for forming a contact plug by bottom-up metal growth" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,781, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming a contact plug by bottom-up metal growth" was invented by Chung-Liang Cheng (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for forming a contact plug by bottom-up metal growth. In one step, a substrate is etched to form a contact hole that exposes a silicon-containing feature in the substrate. In one step, a silicide layer is formed on the silicon-containing f...