US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "LDMOS transistor and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,322, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"LDMOS transistor and method of forming the same" was invented by Chun-Ching Wu (Tainan, Taiwan) and Po-Jen Wang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region...