ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,705, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Capacitor structure, semiconductor structure, and method for manufacturing the same" was invented by Liang-Shiuan Peng (Taipei, Taiwan) and Chih Hung Lu (Hsinghu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure is provided. A first plate, a second plate, and a third plate are sequentially formed over a substrate. The first plate includes a first top surface, first sidewalls and first transition regions, wherein the first transition regions connect the first sidewalls to the fir...