US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Transistor with source and drain via structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,483, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, China).

"Transistor with source and drain via structures" was invented by Kuo-Chiang Tsai (Hsinchu City, Taiwan), Pei-Hsuan Lin (Hsinchu City, Taiwan), Jeng-Ya Yeh (New Taipei City, Taiwan) and Mu-Chi Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source region and a drain region, a first source contact, a first drain contact, a first drain via and a first source via. The source region and the drain region are located over a substrate. The first source contact is disposed on the source region, and th...