ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,251, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Wei-Min Liu (Hsinchu, Taiwan), Li-Li Su (Chubei City, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment includes a device including a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes a first source/drain region in the first fin and adjacent the first gat...