US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Gas phase treatment for manufacturing semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,421, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gas phase treatment for manufacturing semiconductor structure" was invented by Yao-Sheng Huang (Hsinchu, Taiwan), Hsiang-Pi Chang (Hsinchu, Taiwan), Shen-Yang Lee (Hsinchu, Taiwan) and Huang-Lin Chao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes trimming a semiconductor region using a gaseous halogen-based etchant such that the trimmed semiconductor region has a first part and a second part which is formed on the first part and which has a halogen-terminated trimme...