US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 29 for "Structure for multiple sense amplifiers of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,529, issued on Sept. 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure for multiple sense amplifiers of memory device" was invented by Hiroki Noguchi (Hsinchu City, Taiwan) and Ku-Feng Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes several sense amplifiers and at least one reference cell. Each of the sense amplifiers has a first terminal and a second terminal. The first terminals of the sense amplifiers are coupled to a memory cell block, and the second terminals of the sense amplifiers are coupled together to transmi...