ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,492, issued on Sept. 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Physical vapor deposition system and methods of operating the same" was invented by Chia-Hsi Wang (Hsinchu City, Taiwan) and Yen-Yu Chen (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor devices is disclosed. The method includes introducing a target in a chamber of a physical vapor deposition (PVD) system. The method includes depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined accor...